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Dielectric properties of layered FeGaInS{sub 4} single crystals in an alternating electric field

Journal Article · · Semiconductors
 [1]
  1. Azerbaijan National Academy of Sciences, Nagiyev Institute of Catalysis and Inorganic Chemistry (Azerbaijan)
The results of investigations of the frequency and temperature dependences of dielectric losses and the imaginary part of the dielectric permittivity in FeGaInS{sub 4} single crystals are presented. Their experimental values are determined. It is established that the loss tangent and the imaginary part of the permittivity of FeGaInS{sub 4} single crystals in a field with frequencies of 10{sup 4}–10{sup 6} Hz decrease inversely proportional to the frequency (tanδ ~ 1/ω), and the conductivity is characterized by the band–hopping mechanism. For FeGaInS{sub 4}, the relaxation time is calculated, and it is established that there is a mechanism of electron polarization caused by thermal motion in this crystal.
OSTI ID:
22649705
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 50; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English