The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers
Journal Article
·
· Technical Physics Letters
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
Secondary-ion mass spectrometry and Rutherford proton backscattering have been used to measure the concentration profiles of nitrogen atoms and examine the defect structure of epitaxial GaAs layers implanted with 250-keV N{sup +} ions at doses of 5 × 10{sup 14}–5 × 10{sup 16} cm{sup –2}. It was found that no amorphization of the layers being implanted occurs at doses exceeding the calculated amorphization threshold, a concentration of point defects that is formed is substantially lower than the calculated value, and a characteristic specific feature of the defect concentration profiles is the high defect concentration in the surface layer.
- OSTI ID:
- 22786371
- Journal Information:
- Technical Physics Letters, Journal Name: Technical Physics Letters Journal Issue: 7 Vol. 44; ISSN 1063-7850
- Country of Publication:
- United States
- Language:
- English
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