Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film

Journal Article · Mon Apr 15 04:00:00 EDT 2019 · Semiconductors (Woodbury, N.Y., Print)

DOI:https://doi.org/10.1134/S1063782619040250· OSTI ID:22945041

Sakharov, V. I.; Serenkov, I. T.; Bondarev, A. D.; Karabeshkin, K. V.; Fomin, E. V.; Kalyadin, A. E.; Mikoushkin, V. M.; Shek, E. I.; Sherstnev, E. V. ^[1]

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1. Ioffe Institute (Russian Federation)

The concentration profiles of defects produced in structures upon the implantation of nitrogen ions into GaAs epitaxial layers with an uncovered surface and that covered with an AlN film and subsequent annealing are studied. The ion energies and the implantation doses are chosen so that the nitrogen-atom concentration profiles coincided in structures of both types. Rutherford proton backscattering spectra are measured in the random and channeling modes, and the concentration profiles of point defects formed are calculated for the samples under study. It is found that the implantation of nitrogen ions introduces nearly the same number of point defects into structures of both types, and the formation of an AlN film by ion-plasma sputtering is accompanied by the formation of an additional number of defects. However, the annealing of structures of both types leads to nearly the same concentrations of residual defects.

• OSTI ID: 22945041
• Journal Information: Semiconductors (Woodbury, N.Y., Print), Journal Name: Semiconductors (Woodbury, N.Y., Print) Journal Issue: 4 Vol. 53; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
ANNEALING
BACKSCATTERING
CHANNELING
CONCENTRATION RATIO
DEFECTS
EPITAXY
GALLIUM ARSENIDES
ION IMPLANTATION
NITROGEN IONS
PLASMA
POINT DEFECTS
PROTONS
SPECTRA
SPUTTERING
THIN FILMS