Defect Structure of GaAs Layers Implanted with Nitrogen Ions

Journal Article · Sat Sep 15 04:00:00 EDT 2018 · Technical Physics Letters

DOI:https://doi.org/10.1134/S1063785018090298· OSTI ID:22786246

Kalyadin, A. E.; Karabeshkin, K. V.; Kyutt, R. N.; Mikushkin, V. M.; Shek, E. I.; Sherstnev, E. V. ^[1]; Vdovin, V. I. ^[2]

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1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
2. Siberian Branch of the Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics (Russian Federation)

Structural defects formed in epitaxial GaAs layers as a result of 250-keV N{sup +} ion implantation to doses within 5 × 10{sup 14}–5 × 10{sup 16} cm{sup –2} have been studied by the X-ray diffraction (XRD) and transmission electron microscopy techniques. No amorphization of the ion-implanted layer took place in the entire dose range studied. The implantation to doses of 5 × 10{sup 14} and 5 × 10{sup 15} cm{sup –2} led to the appearance of an additional peak on XRD curves, which was related to the formation of a stressed GaAs layer with positive deformation arising due to the formation of point-defect clusters. The implantation to a dose of 5 × 10{sup 16} cm{sup –2} led to the formation of a dense structure of extended defects in the implanted layer, which was accompanied by the relaxation of macrostresses to the initial state.

• OSTI ID: 22786246
• Journal Information: Technical Physics Letters, Journal Name: Technical Physics Letters Journal Issue: 9 Vol. 44; ISSN 1063-7850
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
DEFORMATION
EPITAXY
GALLIUM ARSENIDES
ION IMPLANTATION
KEV RANGE 100-1000
LAYERS
NITROGEN IONS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION DOSES
RELAXATION
STRESSES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION