On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate

Journal Article · Sun Oct 15 00:00:00 EDT 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617100207· OSTI ID:22756349

Semenova, E. S.; Kulkova, I. V.; Yvind, K. ^[1]; Kryzhanovskaya, N. V.; Maximov, M. V.; Zhukov, A. E. ^[2]

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1. Technical University of Denmark, DTU Fotonik, Department of Photonics Engineering (Denmark)
2. St. Petersburg Academic University, Russian Academy of Sciences (Russian Federation)

We report on a study of lasers with an emission wavelength of about 1.5 μm and high temperature stability, synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer are used as the active region of the laser. A quaternary InGaAsP solid solution with a band-gap width of 1.15 eV serves as the waveguide/matrix layer. A high characteristic temperature of the threshold current, T{sub 0} = 205 K, is reached in the temperature range 20–50°C in ridge-waveguide laser diodes. A correlation between the values of T{sub 0} and the band-gap width of the waveguide layers is found.

• OSTI ID: 22756349
• Journal Information: Semiconductors, Vol. 51, Issue 10; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EMISSION
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LASERS
QUANTUM DOTS
SOLID SOLUTIONS
SUBSTRATES
TEMPERATURE RANGE 0400-1000 K
THRESHOLD CURRENT
WAVELENGTHS