Long-wavelength laser based on self-assembled InAs quantum dots in InAlGaAs on InP (001)

Journal Article · Mon Aug 09 00:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1779964· OSTI ID:20632709

Kim, Jin Soo; Lee, Jin Hong; Hong, Sung Ui; Han, Won Seok; Kwack, Ho-Sang; Lee, Chul Wook; Oh, Dae Kon ^[1]

---

1. Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon (Korea, Republic of)

Seven stacks of self-assembled InAs quantum dots (QDs) separated by 28 nm thick InAlGaAs barriers were grown on InP (001) substrate by a solid-source molecular-beam epitaxy and were investigated by cross-sectional transmission electron microscopy and photoluminescence spectroscopy. Gain guided broad-area lasers with a stripe width of 75 {mu}m were fabricated by using the seven-stacked InAs QD layers with the InAlGaAs-InAlAs material system on InP (001). The lasing operation from InAs QDs was observed up to 260 K and the characteristic temperature of the uncoated QD laser calculated from the temperature dependence of threshold current density was 377 K for temperatures up to 200 K, and 138 K above 200 K. The drastic decrease in the characteristic temperature above 200 K was mainly related to the thermal behavior of carriers in QDs, and possibly the thermal coupling of the QDs to the wetting layer and the waveguide region.

• OSTI ID: 20632709
• Journal Information: Applied Physics Letters, Vol. 85, Issue 6; Other Information: DOI: 10.1063/1.1779964; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CURRENT DENSITY
ELECTROLUMINESCENCE
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LASERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
THRESHOLD CURRENT
TRANSMISSION ELECTRON MICROSCOPY
WAVEGUIDES