Shape and spatial correlation control of InAs-InAlAs-InP (001) nanostructure superlattices

Journal Article · Mon Feb 06 00:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2172288· OSTI ID:20778683

Lei, W; Chen, Y H; Jin, P; Ye, X L; Wang, Y L; Xu, B; Wang, Z G ^[1]

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1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

The control of shape and spatial correlation of InAs-InAlAs-InP(001) nanostructure superlattices has been realized by changing the As overpressure during the molecular-beam epitaxy (MBE) growth of InAs layers. InAs quantum wires (QWRs) are obtained under higher As overpressure (1x10{sup -5} Torr), while elongated InAs quantum dots (QDs) are formed under lower As overpressure (5x10{sup -6} or 2.5x10{sup -6} Torr). Correspondingly, spatial correlation changes from vertical anti-correlation in QWR superlattices to vertical correlation in QD superlattices, which is well explained by the different alloy phase separation in InAlAs spacer layers triggered by the InAs nanostrcutures. It was observed that the alloy phase separation in QD superlattices could extend a long distance along the growth direction, indicating the vertical correlation of QD superlattices can be kept in a wide range of spacer layer thickness.

• OSTI ID: 20778683
• Journal Information: Applied Physics Letters, Vol. 88, Issue 6; Other Information: DOI: 10.1063/1.2172288; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM DOTS
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SPACERS
SUPERLATTICES
THICKNESS