Photoluminescence studies on self-organized 1.55-μm InAs/InGaAsP/InP quantum dots under hydrostatic pressure

Journal Article · Mon Jul 14 04:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4890013· OSTI ID:22308719

Zhou, P. Y.; Dou, X. M.; Wu, X. F.; Ding, K.; Jiang, D. S.; Luo, S.; Yang, T.; Zhu, H. J. ^[1]

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1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

We report an experimental study on the optical properties of the self-organized 1.55-μm InAs/InGaAsP/InP quantum dots (QDs) under hydrostatic pressure up to 9.5 GPa at 10 K. The obtained pressure coefficients of emissions from InGaAsP to InAs QDs are 92 meV/GPa and 76 meV/GPa, respectively. Their photoluminescence intensities are found to decrease significantly with increasing pressure due to the pressure-induced Γ-X mixing of InGaAsP at about 8.5 GPa. The lifetime of excitonic emission from QDs decreases from about 1.15 at zero pressure to about 1.05 ns at 7.41 GPa. The wavelength of QD emission was tuned from 1.55 to 0.9 μm by applying a pressure of 8 GPa, displaying the feasibility for indirectly characterizing the individual InAs/InGaAsP/InP QDs of 1.55-μm emission (at zero pressure) under high-pressure using silicon avalanche photodiode.

• OSTI ID: 22308719
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 116; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LIFETIME
OPTICAL PROPERTIES
PHOSPHORUS COMPOUNDS
PHOTODIODES
PHOTOLUMINESCENCE
PRESSURE COEFFICIENT
PRESSURE RANGE GIGA PA
QUANTUM DOTS
SILICON
WAVELENGTHS