Formation of linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering and their optical properties

Journal Article · Sat Sep 01 04:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2777198· OSTI ID:21057532

Sritirawisarn, N; Eijkemans, T J; Noetzel, R ^[1]

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1. COBRA Inter-University Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)

The formation of linear InAs quantum dot (QD) arrays based on self-organized anisotropic strain engineering of an InGaAsP/InP (100) superlattice (SL) template in chemical beam epitaxy is demonstrated, and the optimized growth window is determined. InAs QD formation, thin InGaAsP capping, annealing, InGaAsP overgrowth, and stacking in SL template formation produce wirelike InAs structures along [001] due to anisotropic surface migration and lateral and vertical strain correlations. InAs QD ordering is governed by the corresponding lateral strain field modulation on the SL template surface. Careful optimization of InGaAsP cap layer thickness, annealing temperature, InAs amount and growth rate, and number of SL periods results in straight and well-separated InAs QD arrays. The InAs QD arrays exhibit excellent photoluminescence (PL) emission up to room temperature which is tuned into the 1.55 {mu}m telecommunications wavelength region through the insertion of ultrathin GaAs interlayers. Temperature dependent PL measurements and the linear polarization behavior indicate lateral electronic coupling of the QDs in the arrays.

• OSTI ID: 21057532
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
ANNEALING
CRYSTAL GROWTH
EPITAXY
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
OPTICAL PROPERTIES
OPTIMIZATION
PHOTOLUMINESCENCE
POLARIZATION
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SUPERLATTICES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K