Ordered quantum dot molecules and single quantum dots formed by self-organized anisotropic strain engineering

Journal Article · Tue Feb 15 04:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1840098· OSTI ID:20668203

Lippen, T van; Noetzel, R; Hamhuis, G J; Wolter, J H ^[1]

---

1. European Institute of Telecommunication Technologies/Communication Technology, Basic Research and Applications (eiTT/COBRA) Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)

An ordered lattice of lateral InAs quantum dot (QD) molecules is created by self-organized anisotropic strain engineering of an (In,Ga)As/GaAs superlattice (SL) template on GaAs(311)B by molecular-beam epitaxy, constituting a Turing pattern in solid state. The SL template and InAs QD growth conditions, such as the number of SL periods, growth temperatures, amount and composition of deposited (In,Ga)As, and insertion of Al-containing layers, are studied in detail for an optimized QD ordering within and among the InAs QD molecules on the SL template nodes, which is evaluated by atomic force microscopy. The average number of InAs QDs within the molecules is controlled by the thickness of the upper GaAs separation layer on the SL template and the (In,Ga)As growth temperature in the SL. The strain-correlated growth in SL template formation and QD ordering is directly confirmed by high-resolution x-ray diffraction. Ordered arrays of single InAs QDs on the SL template nodes are realized for elevated SL template and InAs QD growth temperatures together with the insertion of a second InAs QD layer. The InAs QD molecules exhibit strong photoluminescence (PL) emission up to room temperature. Temperature-dependent PL measurements exhibit an unusual behavior of the full width at half maximum, indicating carrier redistribution solely within the QD molecules.

• OSTI ID: 20668203
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 97; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
ATOMIC FORCE MICROSCOPY
CARRIER DENSITY
CRYSTAL GROWTH
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
MOLECULES
PHOTOLUMINESCENCE
QUANTUM DOTS
RESOLUTION
SEMICONDUCTOR MATERIALS
STRESSES
SUPERLATTICES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THICKNESS
X-RAY DIFFRACTION