Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering: A self-ordered quantum dot crystal
- COBRA Inter-University Research Institute on Communication Technology, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)
Multilayer-stacked linear InAs quantum dot (QD) arrays are created on InAs/InGaAsP superlattice templates formed by self-organized anisotropic strain engineering on InP (100) substrates in chemical beam epitaxy. Stacking of the QD arrays with identical emission wavelength in the 1.55 {mu}m region at room temperature is achieved through the insertion of ultrathin GaAs interlayers beneath the QDs with increasing interlayer thickness in successive layers. The increment in the GaAs interlayer thickness compensates the QD size/wavelength increase during strain correlated stacking. This is the demonstration of a three-dimensionally self-ordered QD crystal with fully controlled structural and optical properties.
- OSTI ID:
- 21175626
- Journal Information:
- Applied Physics Letters, Vol. 93, Issue 13; Other Information: DOI: 10.1063/1.2993178; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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