Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm

Journal Article · Mon Feb 23 04:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4913443· OSTI ID:22412693

Photoluminescence (PL) at wavelengths over 1.55 μm from self-assembled InAs quantum dots (QDs) grown on GaAs(001) is observed at room temperature (RT) and 4 K using a bilayer structure with thin cap. The PL peak has been known to redshift with decreasing cap layer thickness, although accompanying intensity decrease and peak broadening. With our strain-controlled bilayer structure, the PL intensity can be comparable to the ordinary QDs while realizing peak emission wavelength of 1.61 μm at 4 K and 1.73 μm at RT. The key issue lies in the control of strain not only in the QDs but also in the cap layer. By combining with underlying seed QD layer, we realize strain-driven bandgap engineering through control of strain in the QD and cap layers.

• OSTI ID: 22412693
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 106; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
COMPARATIVE EVALUATIONS
CONTROL
CRYSTAL STRUCTURE
ELECTRONIC STRUCTURE
ENERGY GAP
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
PHOTOLUMINESCENCE
QUANTUM DOTS
RED SHIFT
STRAINS
TEMPERATURE DEPENDENCE
THICKNESS