InAs/InGaAsP sidewall quantum dots on shallow-patterned InP (311)A

Journal Article · Fri Sep 15 04:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2345045· OSTI ID:20884730

Zhou, D; Noetzel, R; Veldhoven, P J. van; Eijkemans, T J ^[1]

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1. Photonics and Semiconductor Nanophysics, COBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

Highly strained InAs quantum dots (QDs) embedded in InGaAsP are formed at the fast-growing [01-1] mesa sidewall on shallow-patterned InP (311)A substrates by chemical beam epitaxy. Temperature dependent photoluminescence (PL) reveals efficient carrier transfer from the adjacent dashlike QDs in the planar areas to the larger sidewall QDs resulting in well-distinguishable emission around 80 K. The large high-energy shift of the PL from the sidewall QDs as a function of excitation power density is ascribed to the screening of the internal piezoelectric field. The linear polarization of the PL from the sidewall QDs is reversed compared to that of the quantum dashes in the planar areas due to the more symmetric shape and possible nonuniform strain in the sidewall QDs.

• OSTI ID: 20884730
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 100; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE EXCHANGE
EPITAXY
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
PHOTOLUMINESCENCE
PIEZOELECTRICITY
POLARIZATION
POWER DENSITY
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE DEPENDENCE