(In,Ga)As sidewall quantum wires on shallow-patterned InP (311)A

Journal Article · Tue Mar 15 04:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1862763· OSTI ID:20668247

Zhou, D; Noetzel, R; Gong, Q; Offermans, P; Koenraad, P M; Veldhoven, P.J. van; Otten, F W.M. van; Eijkemans, T J; Wolter, J H ^[1]

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1. eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)

(In,Ga)As sidewall quantum wires (QWires) are realized by chemical beam epitaxy along [01-1] mesa stripes on shallow-patterned InP (311)A substrates. The QWires exhibit strong lateral carrier confinement due to larger thickness and In composition compared to the adjacent quantum wells, as determined by cross-sectional scanning-tunneling microscopy and microphotoluminescence (micro-PL) spectroscopy. The PL of the (In,Ga)As QWires with InP and quaternary (Ga,In)(As,P) barriers reveals narrow linewidth, high efficiency, and large lateral carrier confinement energies of 60-70 meV. The QWires are stacked in growth direction with identical PL peak emission energy. The PL emission energy is not only controlled by the (In,Ga)As layer thickness but also by the patterned mesa height. Stacked (In,Ga)As QWires with quaternary barriers exhibit room temperature PL emission at 1.55 {mu}m in the technologically important wavelength region for telecommunication applications.

• OSTI ID: 20668247
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 97; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
CONFINEMENT
EFFICIENCY
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LAYERS
MEV RANGE 10-100
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM WELLS
QUANTUM WIRES
SCANNING TUNNELING MICROSCOPY
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THICKNESS
WAVELENGTHS