Optical properties of stacked InGaAs sidewall quantum wires in InGaAsP/InP

Journal Article · Mon May 15 04:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2199088· OSTI ID:20795813

Zhou, D; Noetzel, R; Otten, F W.M. van; Eijkemans, T J; Wolter, J H ^[1]

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1. COBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

We report on the optical properties of threefold stacked InGaAs sidewall quantum wires (QWires) with quaternary InGaAsP barriers grown on shallow-patterned InP (311)A substrates by chemical beam epitaxy. Temperature dependent photoluminescence (PL) reveals efficient carrier transfer from the adjacent quantum wells (QWells) into the QWires at low temperature, thermally activated repopulation of the QWells at higher temperature, and negligible localization of carriers along the QWires. Strong broadening of power dependent PL indicates enhanced state filling in the QWires compared to that in the QWells. Clear linear polarization of the PL from the QWires confirms the lateral quantum confinement of carriers. These results demonstrate excellent optical quality of the sidewall QWire structures with room temperature PL peak wavelength at 1.55 {mu}m for applications in fiber-based optical telecommunication systems.

• OSTI ID: 20795813
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 99; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
EPITAXY
FIBERS
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
POLARIZATION
QUANTUM WELLS
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
WAVELENGTHS