Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100)

Journal Article · Mon Jan 15 00:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618010207· OSTI ID:22756178

Lenshin, A. S.; Fedyukin, A. V. ^[1]; Zhabotinsky, A. V.; Nikolaev, D. N. ^[2]; Leiste, H.; Rinke, M. ^[3]

---

1. Voronezh State University (Russian Federation)
2. Ioffe Institute (Russian Federation)
3. Karlsruhe Nano Micro Facility (Germany)

The influence of the degree of misorientation and treatment of a GaAs substrate on the structural and optical characteristics of homoepitaxial GaAs/GaAs(100) structures grown by metal–organic chemicalvapor deposition is studied. From the data obtained by a series of structural and spectroscopic techniques, it is shown that the degree of deviation of the substrate from the exact orientation towards the [110] direction by an angle of up to 4° brings about stepwise growth of the GaAs film in the initial stage and a further increase in the degree of misorienration towards the [110] direction to 10° results in an increase in the number of structural defects in the epitaxial film. At the same time, the samples of homoepitaxial structures grown by metal–organic chemical-vapor deposition on GaAs(100) substrates misoriented by 4° towards the [110] direction possess the highest photoluminescence efficiency; it is ~15% higher than the corresponding quantity for structures grown on precisely oriented GaAs(100) substrates. Preliminary polishing of the GaAs substrate (removal of an oxide layer) also yields the intensification of photoluminescence emission compared to emission in the case of an unpolished substrate of the same type. For samples grown on substrates misoriented by 4°, such an increase in the photoluminescence efficiency is ~30%.

• OSTI ID: 22756178
• Journal Information: Semiconductors, Vol. 52, Issue 1; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
EPITAXY
GALLIUM ARSENIDES
NUCLEAR MAGNETIC RESONANCE
OXIDES
PHOTOLUMINESCENCE
SUBSTRATES