Effects of substrate misorientation on the structural properties of CdTe(111) grown by molecular beam epitaxy on GaAs(100)

Journal Article · Sun Oct 30 23:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99777· OSTI ID:6810051

Reno, J L; Gourley, P L; Monfroy, G; Faurie, J P

CdTe (111) layers were grown by molecular beam epitaxy on oriented and misoriented GaAs (100) substrates. The layers were characterized by x-ray diffraction and photoluminescence microscopy. The results indicate that the CdTe layers grown on GaAs (100) misoriented 2/sup 0/ towards the (110) direction had peaks with full width at half-maximum up to four times narrower than either of the other orientations tested. Only threading dislocations were visible on this orientation by photoluminescence microscopy. These results indicate that the structural quality of CdTe grown on GaAs can be significantly improved by the use of an appropriately misoriented substrate.

• Research Organization: Sandia National Laboratory, Albuquerque, New Mexico 87185
• OSTI ID: 6810051
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:18; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
COATINGS
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFRACTION
DISLOCATIONS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LINE DEFECTS
LUMINESCENCE
MOLECULAR BEAM EPITAXY
MORPHOLOGY
PHOTOLUMINESCENCE
PNICTIDES
SCATTERING
TELLURIDES
TELLURIUM COMPOUNDS
VAPOR DEPOSITED COATINGS
X-RAY DIFFRACTION