Study of CdTe(111)B epilayers grown by molecular-beam epitaxy
The growth of high-quality Hg/sub 1-//sub x/Cd/sub x/Te(111)B epitaxial layers involves the growth of a CdTe(111)B buffer layer, whether the growth is performed onto related or foreign substrates. CdTe(111)B layers have been investigated using the x-ray double-crystal rocking curve and the cathodoluminescence imaging techniques. The optimization of the growth conditions for CdTe(111)B layers is presented for a high-quality homoepitaxy. The heteroepitaxy of CdTe(111)B on GaAs(100) substrates is then discussed, in the case of GaAs substrates oriented (100), misoriented by 2/sup 0/ towards (110), and misoriented by 5/sup 0/ towards (111). The results indicate that a 2/sup 0/ misorientation leads to CdTe(333) peaks with full width at half-maximum up to four times narrower then either of the other orientations tested. Furthermore, only threading dislocations were visible on this orientation by cathodoluminescence imaging.
- Research Organization:
- Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60680
- OSTI ID:
- 6759591
- Journal Information:
- J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 7:2; ISSN JVTAD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360104* -- Metals & Alloys-- Physical Properties
BUFFERS
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CATHODOLUMINESCENCE
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL GROWTH
DIFFRACTION
EPITAXY
LAYERS
LUMINESCENCE
MOLECULAR BEAM EPITAXY
SCATTERING
TELLURIDES
TELLURIUM COMPOUNDS
X-RAY DIFFRACTION