Substrate misorientation effects on epitaxial GaInAsSb
- Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.
- Lockheed Martin Corp., Schenectady, NY (United States)
The effect of substrate misorientation on the growth of GaInAsSb was studied for epilayers grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy. The substrates were (100) misoriented 2 or 6{degree} toward (110), (111)A, or (111)B. The surface is mirror-like and featureless for layers grown with a 6{degree} toward (111)B misorientation, while, a slight texture was observed for layers grown on all other misorientations. The optical quality of layers, as determined by the full width at half-maximum of photoluminescence spectra measured at 4K, is significantly better for layers grown on substrates with a 6{degree} toward (111)B misorientation. The incorporation of Zn as a p-type dopant in GaInAsSb is about 1.5 times more efficient on substrates with 6{degree} toward (111)B misorientation compared to 2{degree} toward (110) misorientation. The external quantum efficiency of thermophotovoltaic devices is not, however, significantly affected by substrate misorientation.
- Research Organization:
- Knolls Atomic Power Lab., Schenectady, NY (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
- DOE Contract Number:
- AC12-76SN00052
- OSTI ID:
- 319663
- Report Number(s):
- KAPL-P--000194; K--97127; CONF-971201--; ON: DE99001968
- Country of Publication:
- United States
- Language:
- English
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