OMVPE growth and characterization of GaInAsSb for thermophotovoltaics
Studies on the materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for thermophotovoltaic (TPV) devices are reviewed. Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) using all organometallic precursors including triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony with diethyltellurium and dimethylzinc as the n- and p-type dopants, respectively. The overall material quality of these alloys depends on growth temperature, In content, V/III ratio, substrate misorientation, and to a lesser extent, growth rate. A mirror-like surface morphology and room temperature photoluminescence (PL) are obtained for GaInAsSb layers with peak emission in the wavelength range between 2 and 2.5 {micro}m. The crystal quality improves for growth temperature decreasing from 575 to 525 C, and with decreasing In content, as based on epilayer surface morphology and low temperature PL spectra. A trend of smaller full width at half-maximum for low temperature PL spectra is observed as the growth rate is increased from 1.5 to 2.5 and 5 {micro}m/h. In general, GaInAsSb layers grown on (100) GaSb substrates with a 6{degree} toward (111)B misorientation exhibited overall better material quality than layers grown on the more standard substrate (100) 2{degree} toward (110). Consistent growth of high performance lattice-matched GaInAsSb TPV devices is also demonstrated.
- Research Organization:
- Knolls Atomic Power Lab. (KAPL), Niskayuna, NY (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States); Department of the Air Force, Washington, DC (United States)
- DOE Contract Number:
- AC12-76SN00052
- OSTI ID:
- 307842
- Report Number(s):
- KAPL-P-000093; K-98098; CONF-9806177-; ON: DE99001577; CNN: Contract F19628-95-C-0002; TRN: AHC29905%%19
- Resource Relation:
- Conference: 16. conference on crystal growth and epitaxy, Fallen Leaf Lake, CA (United States), 7-10 Jun 1998; Other Information: PBD: Jun 1998
- Country of Publication:
- United States
- Language:
- English
Similar Records
Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor phase epitaxy
Extending the cutoff wavelength of lattice-matched GaInAsSb/GaSb thermophotovoltaics devices