Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells

Journal Article · Sun Jul 15 04:00:00 EDT 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618070187· OSTI ID:22749884

Pozina, G. ^[1]; Kaliteevski, M. A.; Gubaidullin, A. R.; Ivanov, K. A. ^[2]; Egorov, A. Yu. ^[3]

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1. Linkoping University, Department of Physics, Chemistry and Biology (IFM) (Sweden)
2. Russian Academy of Sciences, St. Petersburg National Research Academic University (Russian Federation)
3. Ioffe Institute (Russian Federation)

The time-resolved photoluminescence of a Bragg structure formed by InAs single-layer quantum wells in a GaAs matrix is investigated experimentally. The comparison of photoluminescence spectra recorded from the edge and the surface of the sample indicates that Bragg ordering of the quantum wells leads to substantial modification of the spectra, in particular, to the appearance of additional modes. The spectrum recorded at the edge of the sample features a single line corresponding to the exciton ground state. In the spectrum recorded at the surface, an additional line whose frequency and propagation angle correspond to the Bragg condition for quantum wells, appears at high excitation levels. The calculation of the modal Purcell factor explains the fact that spontaneous emission is enhanced only for specific propagation angles and frequencies, rather than for all angles and frequencies satisfying the Bragg condition.

• OSTI ID: 22749884
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
GROUND STATES
INDIUM ARSENIDES
QUANTUM WELLS
SPECTRA
TIME RESOLUTION