Experimental Study of Spontaneous Emission in the Bragg Multiple Quantum Wells Structure of InAs Monolayers Embedded in a GaAs Matrix

Journal Article · Sat Dec 15 04:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618140245· OSTI ID:22945156

Pozina, G. ^[1]; Kaliteevski, M. A.; Nikitina, E. V.; Gubaidullin, A. R.; Morozov, K. M.; Girshova, E. I. ^[2]; Egorov, A. Yu. ^[2]

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1. Department of Physics, Chemistry and Biology (IFM), Linkoping University (Sweden)
2. St. Petersburg Academic University (Russian Federation)

Time-resolved photoluminescence of a Bragg structure of InAs-monolayer quantum wells in GaAs matrix was experimentally studied with. Comparison of luminescence patterns from the side and from the surface of a sample showed that Bragg-type ordering of quantum wells leads to a substantial alteration of the photoluminescence spectra including appearance of additional radiative modes. The sample side spectrum contains a single line corresponding to a ground state of an exciton. The surface spectrum at high excitation levels a new radiation line appears whose frequency and propagation angle correspond to the Bragg condition for quantum wells. A numerical calculation of the modal Purcell factor explains why the radiative emission amplification occurs only at a set of specific angles and frequencies, as opposed to the whole range that satisfies the Bragg condition.

• OSTI ID: 22945156
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 14 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BRAGG REFLECTION
EXCITATION
GALLIUM ARSENIDES
GROUND STATES
INDIUM ARSENIDES
MATRIX MATERIALS
NUMERICAL SOLUTION
PHOTOLUMINESCENCE
QUANTUM WELLS
SPECTRA
SURFACES
TIME RESOLUTION