Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells

Journal Article · Tue Feb 15 04:00:00 EST 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611020229· OSTI ID:22004871

Kaibyshev, V Kh; Terent'ev, Ya V; Ivanov, S V; Kop'ev, P S ^[1]

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1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

Exciton photoluminescence spectra, photoluminescence excitation spectra, and magnetophotoluminescence spectra of single (GaAs/AlGaAs/ZnMnSe) and double (GaAs/AlGaAs/ZnSe/ZnCdMnSe) heterovalent quantum wells formed by molecular beam epitaxy are studied. It is shown that the exciton absorption spectrum of such quantum wells mainly reproduces the resonant exciton spectrum expected for usual quantum wells with similar parameters, while the radiative exciton recombination have substantial distinctions, in particular the additional localization mechanism determined by defects generated by heterovalent interface exists. The nature of these localization centers is not currently clarified; their presence leads to broadening of photoluminescence lines and to an increase in the Stokes shift between the peaks of luminescence and absorption, as well as determining the variation in the magnetic g factor of bound exciton complexes.

• OSTI ID: 22004871
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 45; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ABSORPTION SPECTRA
ALUMINIUM ARSENIDES
DEFECTS
EXCITATION
EXCITONS
GALLIUM ARSENIDES
INTERFACES
MANGANESE SELENIDES
MOLECULAR BEAM EPITAXY
PEAKS
PHOTOLUMINESCENCE
QUANTUM WELLS
RECOMBINATION
ZINC SELENIDES