Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells

Journal Article · Sat Nov 14 23:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615110081· OSTI ID:22469701

Firsov, D. A.; Vorobjev, L. E.; Balagula, R. M. ^[1]; Kulagina, M. M.; Vasil’iev, A. P. ^[2]

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1. Peter the Great Saint-Petersburg Polytechnic University (Russian Federation)
2. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

The photoluminescence and intersubband absorption spectra are studied in GaAs/AlGaAs tunnel- coupled quantum well structures. The peak positions in the photoluminescence and absorption spectra are consistent with the theoretically calculated energies of optical carrier transitions. The effect of a transverse electric field and temperature on intersubband light absorption is studied. It is caused by electron redistribution between the size-quantization levels and a variation in the energy spectrum of quantum wells. The variation in the refractive index in the energy region of observed intersubband transitions is estimated using Kramers–Kronig relations.

• OSTI ID: 22469701
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 49; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION SPECTRA
ALUMINIUM ARSENIDES
CHARGE CARRIERS
ELECTRIC FIELDS
ELECTRONS
EMISSION SPECTRA
ENERGY SPECTRA
GALLIUM ARSENIDES
KRAMERS-KRONIG CORRELATION
PHOTOLUMINESCENCE
QUANTIZATION
QUANTUM WELLS
REFRACTIVE INDEX
VISIBLE RADIATION