Optical studies of a two-dimensional photonic crystal with the InAs/InGaAs quantum-dot structure as an active region

Journal Article · Sat Jul 15 04:00:00 EDT 2006 · Semiconductors

DOI:https://doi.org/10.1134/S1063782606070141· OSTI ID:21088508

Usov, O A; Nashchekin, A V; Arakcheeva, E M; Tanklevskaya, E M; Konnikov, S G; Zhukov, A E; Maksimov, M V; Ledentsov, N N; Ustinov, V M ^[1]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

A two-dimensional semiconductor photonic crystal with a hexagonal lattice of submicrometer holes is produced by etching the GaAs/AlGaAs planar structure containing the InAs/InGaAs quantum dots in the waveguide layer. By analyzing the reflectance spectra at variable angles of incidence and polarizations of light, the photonic band structure is determined. The Fano resonance peaks revealed in the reflectance spectra at the TM (TE) polarization along the {gamma}-K ({gamma}-M) symmetry direction are due to the resonance interaction of optically active photonic bands with the incident light. The band structure of the radiation leakage modes is investigated by studying the angular dependence of the photoluminescence intensity. A threefold increase in the photoluminescence intensity revealed at the resonance frequency of the photonic crystal is attributed to the Purcell effect.

• OSTI ID: 21088508
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 40; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CRYSTALS
ETCHING
GALLIUM ARSENIDES
HEXAGONAL LATTICES
HOLES
INCIDENCE ANGLE
INDIUM ARSENIDES
LAYERS
PHOTOLUMINESCENCE
POLARIZATION
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SPECTRA
SYMMETRY
WAVEGUIDES