Uniform formation of high-density InAs quantum dots by InGaAs capping growth
- Department of Electronic Engineering, University of Electro-Communications, 1-5-1 Chougaoka, Chofu, Tokyo 182-8585 (Japan)
We studied the capping growth process of an InGaAs on high-density InAs/GaAs(001) quantum dots (QDs) with a bimodal size distribution grown by molecular beam epitaxy. Atomic force microscopy and reflection high energy electron beam diffraction observations revealed that the bimodal size distribution is composed of larger QDs with (110) facets and smaller QDs with (136) facets. In addition, it was found that, during the InGaAs capping growth, the height of larger QDs decreased, while the height of smaller QDs increased due to the incorporation of indium adatoms. As a result, the size fluctuation of the QDs was suppressed as compared to GaAs capping growth. We achieved a narrow photoluminescence (PL) linewidth of 24 meV and an enhanced PL peak intensity.
- OSTI ID:
- 21182611
- Journal Information:
- Journal of Applied Physics, Vol. 104, Issue 5; Other Information: DOI: 10.1063/1.2975366; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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