Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range

Journal Article · Sun May 15 04:00:00 EDT 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616050079· OSTI ID:22645546

Karachinsky, L. Ya.; Novikov, I. I.; Babichev, A. V.; Nevedomskiy, V. N. ^[1]; Bugrov, V. E. ^[2]

---

1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
2. St. Petersburg National Research University of Information Technologies, Mechanics, and Optics ITMO (Russian Federation)

It is demonstrated that metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, which emit light in the 1250–1400 nm spectral range, can be fabricated by molecular-beam epitaxy. The structural and optical properties of the heterostructures are studied by X-ray diffraction analysis, transmission electron microscopy, and the photoluminescence method. Comparative analysis of the integrated photoluminescence intensity of the heterostructures and a reference sample confirm the high efficiency of radiative recombination in the heterostructures. It is confirmed by transmission electron microscopy that dislocations do not penetrate into the active region of the metamorphic heterostructures, where the radiative recombination of carriers occurs.

• OSTI ID: 22645546
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 5 Vol. 50; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
DISLOCATIONS
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM WELLS
RECOMBINATION
TRANSMISSION ELECTRON MICROSCOPY
VISIBLE RADIATION
X-RAY DIFFRACTION