Photocurrent in self-organized InAs quantum dots in 1.3 {mu}m InAs/InGaAs/GaAs semiconductor laser heterostructures

Journal Article · Sun Jan 15 04:00:00 EST 2006 · Semiconductors

DOI:https://doi.org/10.1134/S1063782606010155· OSTI ID:21088608

Maksimov, M V; Ustinov, V M; Seisyan, R P ^[1]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

The photocurrent spectra of InAs/InGaAs/GaAs laser heterostructures with self-organized InAs quantum dots (QDs) are studied. The study has been performed with a sample illuminated perpendicularly or in parallel to the QD plane. The optical density of QDs, maximum gain in the laser structure, radiative recombination time, and polarization characteristics of absorption have been determined from the experiment. The photocurrent spectra were correlated with specific features of lasing. The absorption spectrum is interpreted as a superposition of optical transitions between states of the discrete energy spectrum, those between the states of the continuous spectrum, and 'mixed' transitions.

• OSTI ID: 21088608
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 40; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ABSORPTION SPECTRA
ENERGY SPECTRA
GALLIUM ARSENIDES
INDIUM ARSENIDES
POLARIZATION
QUANTUM DOTS
SEMICONDUCTOR LASERS