Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range

Journal Article · Thu Sep 15 04:00:00 EDT 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616090098· OSTI ID:22649708

Novikov, I. I.; Karachinsky, L. Ya.; Denisov, D. V. ^[1]; Blokhin, S. A.; Blokhin, A. A.; Nadtochiy, A. M. ^[2]; Kurochkin, A. S. ^[3]; Egorov, A. Yu. ^[1]

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1. Connector Optics OOO (Russian Federation)
2. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
3. St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (Russian Federation)

The optical properties of elastically strained semiconductor heterostructures with InGaAs/InGaAlAs quantum wells (QWs), intended for use in the formation of the active region of lasers emitting in the spectral range 1520–1580 nm, are studied. Active regions with varied lattice mismatch between the InGaAs QWs and the InP substrate are fabricated by molecular beam epitaxy. The maximum lattice mismatch for the InGaAs QWs is +2%. The optical properties of the elastically strained InGaAlAs/InGaAs/InP heterostructures are studied by the photoluminescence method in the temperature range from 20 to 140°C at various power densities of the excitation laser. Investigation of the optical properties of InGaAlAs/InGaAs/InP experimental samples confirms the feasibility of using the developed elastically strained heterostructures for the fabrication of active regions for laser diodes with high temperature stability.

• OSTI ID: 22649708
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 50; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CRYSTAL DEFECTS
EXCITATION
FABRICATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
OPTICAL PROPERTIES
PHASE STABILITY
PHOTOLUMINESCENCE
POWER DENSITY
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
STRAINS
SUBSTRATES
TEMPERATURE DEPENDENCE