On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm

Journal Article · Sat Oct 15 04:00:00 EDT 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616100201· OSTI ID:22649680

Novikov, I. I.; Karachinsky, L. Ya. ^[1]; Kolodeznyi, E. S.; Bougrov, V. E. ^[2]; Kurochkin, A. S.; Gladyshev, A. G.; Babichev, A. V. ^[1]; Gadzhiev, I. M.; Buyalo, M. S. ^[2]; Zadiranov, Yu. M.; Shernyakov, Yu. M. ^[3]; Savelyev, A. V.; Nyapshaev, I. A. ^[2]; Egorov, A. Yu. ^[1]

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1. Connector Optics LLC (Russian Federation)
2. National Research University of Information Technologies, Mechanics and Optics (Russian Federation)
3. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

The results of experimental studies of the gain properties of “thin” (3.2 nm thick) elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm are presented. The results of studying the threshold and gain characteristics of stripe laser diodes with active regions based on “thin” quantum wells with a lattice–substrate mismatch of +1.0% show that the quantum wells under study exhibit a high modal gain of 11 cm{sup –1} and a low transparency current density of 46 A/cm{sup 2} per quantum well.

• OSTI ID: 22649680
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 50; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CURRENT DENSITY
ELECTRIC CURRENTS
GAIN
GALLIUM ARSENIDES
INDIUM ARSENIDES
INFRARED SPECTRA
NEAR INFRARED RADIATION
OPACITY
QUANTUM WELLS
STRAINS
SUBSTRATES