On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures

Journal Article · Sat Sep 15 04:00:00 EDT 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618090075· OSTI ID:22749803

Kolodeznyi, E. S.; Kurochkin, A. S.; Rochas, S. S.; Babichev, A. V.; Novikov, I. I.; Gladyshev, A. G. ^[1]; Karachinsky, L. Ya. ^[2]; Savelyev, A. V.; Denisov, D. V. ^[2]

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1. ITMO University (Russian Federation)
2. OOO Connector Optics (Russian Federation)

The photoluminescence of strained InGaAlAs/InGaAs/InP heterostructures with an active region consisting of nine In{sub 0.74}Ga{sub 0.26}As quantum wells and δ-doped In{sub 0.53}Al{sub 0.20}Ga{sub 0.27}As barrier layers grown by molecular beam epitaxy on an InP(100) substrate is investigated. Analysis of the photoluminescence spectra demonstrates that p-type doping leads to an increase in the photoluminescence efficiency at low excitation levels in comparison to a heterostructure with undoped barriers, and increasing the level of barrier doping to (1–2) × 10{sup 12} cm{sup –2} results in the suppression of nonradiative recombination.

• OSTI ID: 22749803
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
EFFICIENCY
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM WELLS