Conditions of growth of high-quality relaxed Si{sub 1–x}Ge{sub x} layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire

Journal Article · Thu Sep 15 04:00:00 EDT 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616090220· OSTI ID:22649700

Shengurov, V. G.; Chalkov, V. Yu.; Denisov, S. A. ^[1]; Nezhdanov, A. V.; Mashin, A. I. ^[2]; Filatov, D. O. ^[1]; Stepikhova, M. V.; Krasilnik, Z. F. ^[2]

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1. Nizhny Novgorod State University, Physical Technical Research Institute (Russian Federation)
2. Nizhny Novgorod State University (Russian Federation)

The conditions of the epitaxial growth of high-quality relaxed Si{sub 1–x}Ge{sub x} layers by the combined method of the sublimation molecular-beam epitaxy and vapor-phase decomposition of monogermane on a hot wire are considered. The combined growth procedure proposed provides a means for growing Si{sub 1–x}Ge{sub x} layers with a thickness of up to 2 µm and larger. At reduced growth temperatures (T{sub S} = 325–350°C), the procedure allows the growth of Si{sub 1–x}Ge{sub x} layers with a small surface roughness (rms ≈ 2 nm) and a low density of threading dislocations. The photoluminescence intensity of Si{sub 1–x}Ge{sub x}:Er layers is significantly (more than five times) higher than the photoluminescence intensity of layers produced under standard growth conditions (T{sub S} ≈ 500°C) and possess an external quantum efficiency estimated at a level of ~0.4%.

• OSTI ID: 22649700
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 50; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CONCENTRATION RATIO
DECOMPOSITION
DISLOCATIONS
GERMANIUM SILICIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM EFFICIENCY
ROUGHNESS
SUBLIMATION
SURFACES
TEMPERATURE DEPENDENCE
VAPORS