Surface studies during growth of Si{sub 1-x}Ge{sub x}/Si from gaseous Si and Ge hydrides
- Univ. of London (United Kingdom); and others
The epitaxial growth of Si and Si{sub 1-x}Ge{sub x} alloys from molecular beams of gaseous Si (Si{sub 2}H{sub 6}) and Ge (GeH{sub 4}) hydrides on Si(001) substrates (Si gas-source molecular-beam epitaxy) has been studied using reflection high-energy electron diffraction (RHEED). Diffraction patterns reveal that Ge deposited on Si results in a Stranski-Krastanow growth mode with a change in surface reconstruction prior to the onset of three-dimensional growth. RHEED intensity oscillations measured during Si{sub 1-x}Ge{sub x} alloy growth indicate that below 600 {degrees}C, the addition of GeH{sub 4} flux to the substrate results in an enhanced growth rate (GR), but above 600 {degrees}C this phenomenon is not observed and the GR remains proportional to the Si{sub 2}H{sub 6} flux. Further, a temperature and flux dependent change in the growth rate, {Delta}Gr, is observed at the Si/Si{sub 1-x}Ge{sub x} interface. At low temperatures (<580 {degrees}C), the growth of several monolayers precedes the establishment of a constant alloy GR, indicative of a graded Ge composition in the interface region. This phenomenon is discussed in terms of the temperatures dependent reaction kinetics in this system during growth between 520-640 {degrees}C. 27 refs., 5 figs.
- OSTI ID:
- 147070
- Report Number(s):
- CONF-9210296--
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 11; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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