Epitaxially Grown Monoisotopic Si, Ge, and Si{sub 1–x}Ge{sub x} Alloy Layers: Production and Some Properties
- Nizhny Novgorod State University (Russian Federation)
- Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
- Russian Academy of Sciences, Devyatykh Institute of Chemistry of High-Purity Substances (Russian Federation)
- Leibniz Institute for Crystal Growth (Germany)
The technology of the growth of Si, Ge, and Si{sub 1–x}Ge{sub x} layers by molecular-beam epitaxy with the use of a sublimation source of monoisotopic {sup 30}Si or {sup 28}Si and/or gas sources of monogermane {sup 74}GeH{sub 4} is demonstrated. All of the epitaxial layers are of high crystal quality. The secondary-ion mass spectroscopy data and Raman data suggest the high isotopic purity and structural perfection of the {sup 30}Si, {sup 28}Si, {sup 74}Ge, and {sup 30}Si{sub 1–x}{sup 74}Ge{sub x} layers. The {sup 30}Si layers doped with Er exhibit an efficient photoluminescence signal.
- OSTI ID:
- 22645596
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 50; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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