Band engineered epitaxial Ge-Si{sub x}Ge{sub 1-x} core-shell nanowire heterostructures

Journal Article · Mon Jul 20 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3173811· OSTI ID:21294198

Varahramyan, K M; Ferrer, D; Tutuc, E; Banerjee, S K ^[1]

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1. Microelectronics Research Center, University of Texas, Austin, Texas 78758 (United States)

We report the growth of germanium (Ge)-silicon-germanium (Si{sub x}Ge{sub 1-x}) epitaxial core-shell nanowire (NW) heterostructures, with tunable Si and Ge shell content. The Ge NWs are grown using the vapor-liquid-solid growth mechanism, and the Si{sub x}Ge{sub 1-x} shells are grown in situ, conformally on the Ge NWs using ultrahigh vacuum chemical vapor deposition. We use transmission electron microscopy to demonstrate epitaxial shell growth, and scanning energy dispersive x-ray spectroscopy to determine the shell thickness and content. The Si and Ge shell content can be tuned depending on the SiH{sub 4} and GeH{sub 4} partial pressures during the shell growth, enabling band engineered core-shell NW heterostructures.

• OSTI ID: 21294198
• Journal Information: Applied Physics Letters, Vol. 95, Issue 3; Other Information: DOI: 10.1063/1.3173811; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CHEMICAL ANALYSIS
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
EPITAXY
GERMANIUM ALLOYS
GERMANIUM HYDRIDES
HETEROJUNCTIONS
LAYERS
PARTIAL PRESSURE
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SILANES
SILICON
SILICON ALLOYS
TRANSMISSION ELECTRON MICROSCOPY
VAPORS
X-RAY SPECTROSCOPY