Epitaxy and doping of Si and Si{sub 1-x}Ge{sub x} at low temperature by rapid thermal chemical vapor deposition
- France Telecom CNET-CNS, Meylan (France); and others
Rapid thermal chemical vapor deposition has been applied to the epitaxy and p-type doping of Si and Si{sub 1-x}Ge{sub x} structure on a 1-nm scale using SiH{sub 4}, GeH{sub 4} and B{sub 2}H{sub 6} in an H{sub 2} carrier gas. First, the kinetics of silicon growth is studied between 1000 and 550 {degrees}C and the results are shown to be consistent with a model based on the Langmuir-Hinshelwood adsorption mechanism. The growth kinetics of the Si{sub 1-x}Ge{sub x} alloys is determined down to 525 {degrees}C and compared to that of the silicon. Transmission electron microscopy characterizations show that epitaxial structures and short-period (1.7-nm) superlattices without any extended defects are grown at these low temperatures. The boron incorporation in Si and Si{sub 1-x}Ge{sub x} is then studied. At low temperature, doping levels exceeding 10{sup 20} holes cm{sup {minus}3} and delta dopings with a real full width at half-maximum around 1 nm are achieved. In the final part, the growth technique is applied to p-type modulation-doped double heterostructures, and we report a hole mobility value as high as 1800 cm{sup 2}/V s at 30 K for a sheet density of 4x10{sup 12} cm{sup {minus}2}. 22 refs., 10 figs.
- OSTI ID:
- 147080
- Report Number(s):
- CONF-9210296--
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 11; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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