Growth and characterization of Si/sub 1/. sqrt. /sub x/Ge/sub x/ and Ge epilayers on (100) Si

Journal Article · Wed Jun 15 04:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.340312· OSTI ID:5254538

Baribeau, J M; Jackman, T E; Houghton, D C; Maigne, P; Denhoff, M W

Two approaches to the growth of high-quality epitaxial Ge epilayers on (100) Si have been investigated. The first consisted of compositional-grading Si/sub 1/..sqrt../sub x/Ge/sub x/ layers and the use of strained-layer superlattices as dislocation filters. In general, this method produced unsatisfactory results, due to the difficulty in achieving good epitaxial growth in the Ge concentration interval 30%-70%. The second approach consisted of simply depositing pure Ge directly on (100) Si. Excellent epitaxial films with dislocation densities of less than 10/sup 7/ cm/sup -2/ and smooth morphology were obtained after optimization of the growth parameters. The initial growth temperature and post-growth annealing were found to be critical in obtaining good epitaxial material

• Research Organization: Laboratory of Microstructural Sciences, Divison of Physics, National Research Council of Canada, Ottawa, Ontario K1A OR6, Canada
• OSTI ID: 5254538
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:12; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ANNEALING
CRYSTAL GROWTH
DEPOSITION
ELEMENTS
ENERGY BEAM DEPOSITION
EPITAXY
GERMANIUM
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
HEAT TREATMENTS
HIGH TEMPERATURE
METALS
MOLECULAR BEAM EPITAXY
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SURFACE COATING
TEMPERATURE DEPENDENCE