Heteroepitaxy of Ge-Si{sub 1{minus}x}Ge{sub x} superlattices on Si (100) substrates by GeH{sub 4}-Si MBE
Conference
·
OSTI ID:541086
- Russian Academy of Sciences, Nizhny Novgorod (Russian Federation). Inst. for Physics of Microstructures
- Inst. for Rare Metals Giredmet, Moscow (Russian Federation)
The authors applied GeH{sub 4}-SI MBE for growing Ge-Si{sub 1{minus}x}Ge{sub x} superlattices on Si(100). They investigated the distribution and the structure of defects inside heteroepitaxial Si{sub 1{minus}x}Ge{sub x} layers grown on Si(100). It was shown that the system has unique peculiarities of a dislocation structure formation. They found out that the plastic deformation on a layer-substrate heteroboundary eliminates strong elastic deformation inside the grown layer.
- OSTI ID:
- 541086
- Report Number(s):
- CONF-960450--; ISBN 0-7803-3179-6
- Country of Publication:
- United States
- Language:
- English
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