Characteristics of B-doped Si[sub 1[minus]x]Ge[sub x] growth rates by chemical vapor deposition using Si[sub 2]H[sub 6], GeH[sub 4], and B[sub 2]H[sub 6] gases
- NTT LSI Laboratories, Kanagawa (Japan)
Low temperature heteroepitaxy of highly B-doped Si[sub 1[minus]x]Ge[sub x] on Si by low pressure CVD has been investigated from the viewpoint of growth rate. The growth temperature was 550-730 C, and the concentration of B was 10[sup 18]-10[sup 21] cm[sup [minus]3]. For the undoped and B-doped Si[sub 0.75]Ge[sub 0.25], the growth rate was limited by the supply of Si[sub 2]H[sub 6] and GeH[sub 4] to the surface at temperatures above 630 C and by the desorption of hydrogen from the surface at temperatures below 630 C. The activation energy of the growth rate was 2.0 eV for undoped alloy below 630 C. A reduced activation energy was found for in situ B-doping. The growth rates of alloy (the surface reaction rates of Si[sub 2]H[sub 6] and GeH[sub 4]) increase with increase in the surface density of B deposited by the decomposition of B[sub 2]H[sub 6] on the surface. The deposition rate of B is determined only by the quantity of B[sub 2]H[sub 6] supplied to the surface and does not depend on the composition of the alloy surface layer or the growth temperature.
- OSTI ID:
- 5986343
- Journal Information:
- Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Journal Issue: 7 Vol. 140:7; ISSN JESOAN; ISSN 0013-4651
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601* -- Other Materials-- Preparation & Manufacture
ACTIVATION ENERGY
ALLOYS
BORON COMPOUNDS
BORON HYDRIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DATA
DEPOSITION
DOPED MATERIALS
ELEMENTS
ENERGY
EPITAXY
EXPERIMENTAL DATA
GERMANIUM ALLOYS
GERMANIUM COMPOUNDS
GERMANIUM HYDRIDES
HYDRIDES
HYDROGEN COMPOUNDS
INFORMATION
MATERIALS
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILANES
SILICON
SILICON ALLOYS
SILICON COMPOUNDS
SUBSTRATES
SURFACE COATING