Low pressure chemical vapor deposition of Si{sub 1{minus}x}Ge{sub x} films using Si{sub 2}H{sub 6} and GeH{sub 4} source gases
- Seoul National Univ. (Korea, Republic of). Dept. of Metallurgical Engineering
The authors have investigated the deposition behavior of Si{sub 1{minus}x}Ge{sub x} (x {le} 0.31) films using Si{sub 2}H{sub 6} and GeH{sub 4} source gases in low pressure chemical vapor deposition. The deposition temperature and pressure were varied from 400 to 500 C and from 0.5 to 1 Torr, respectively. The authors identified that the germanium content in the film slightly increased with pressure, while it did not change with temperature at a fixed flow rate of two source gases. The deposition rate was enhanced as the germanium incorporation in the film was increased, and the activation energy obtained from the Arrhenius plot of deposition rate decreased from 1.5 eV for Si to 1 eV for Si{sub 0.69}Ge{sub 0.31}. Both these results were attributed to lowering the activation energy of hydrogen desorption from the growing film surface. The transition temperature from amorphous to polycrystalline during the deposition was about 475 C for the Si{sub 0.69}Ge{sub 0.31} alloy film, and the average grain size of this film deposited at 500 C was measured as approximately 60 nm.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 201414
- Journal Information:
- Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 1 Vol. 143; ISSN 0013-4651; ISSN JESOAN
- Country of Publication:
- United States
- Language:
- English
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