Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates
- Vozonezh State University (Russian Federation)
- Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Nanostructured aluminum-nitride films are formed by reactive ion-plasma sputtering onto GaAs substrates with different orientations. The properties of the films are studied via structural analysis, atomic force microscopy, and infrared and visible–ultraviolet spectroscopy. The aluminum-nitride films can have a refractive index in the range of 1.6–4.0 at a wavelength of ~250 nm and an optical band gap of ~5 eV. It is shown that the morphology, surface composition, and optical characteristics of AlN/GaAs heterophase systems can be controlled using misoriented GaAs substrates.
- OSTI ID:
- 22649698
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 50; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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