On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates

Journal Article · Fri Nov 15 04:00:00 EST 2019 · Semiconductors

DOI:https://doi.org/10.1134/S1063782619110174· OSTI ID:22944758

Fedyukin, A. V.; Terekhov, V. A.; Barkov, K. A. ^[1]; Arsentyev, I. N.; Bondarev, A. D.; Fomin, E. V.; Pikhtin, N. A. ^[2]

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1. Voronezh State University (Russian Federation)
2. Ioffe Institute (Russian Federation)

Thin AlN nanofilms are produced by reactive ion-plasma deposition onto GaAs(100) substrates misoriented with respect to the 〈100〉 direction to different degrees. It is shown that growth on substrates misoriented with respect to the 〈100〉 direction to different degrees results in the formation of AlN films with different phase compositions and crystal states. An increase in the degree of misorientation of the GaAs(100) substrate used for growth influences both the structural quality of AlN nanofilms and their electronic structure, surface morphology, and optical properties. Thus, the morphology, surface composition, and optical functional characteristics of AlN/GaAs(100) heterophase systems can be controlled using differently misoriented GaAs(100) substrates.

• OSTI ID: 22944758
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 53; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
CRYSTALS
DEPOSITION
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
MORPHOLOGY
NANOFILMS
OPTICAL PROPERTIES
PLASMA
SUBSTRATES
SURFACES