Fabrication of FeSi and Fe{sub 3}Si compounds by electron beam induced mixing of [Fe/Si]{sub 2} and [Fe{sub 3}/Si]{sub 2} multilayers grown by focused electron beam induced deposition
- Physikalisches Institut, Goethe-Universität, Max-von-Laue-Str. 1, D-60438 Frankfurt am Main (Germany)
- S3 Center, Nanoscience Institute-CNR, Via Campi 213/a, 41125 Modena (Italy)
Fe-Si binary compounds have been fabricated by focused electron beam induced deposition by the alternating use of iron pentacarbonyl, Fe(CO){sub 5}, and neopentasilane, Si{sub 5}H{sub 12} as precursor gases. The fabrication procedure consisted in preparing multilayer structures which were treated by low-energy electron irradiation and annealing to induce atomic species intermixing. In this way, we are able to fabricate FeSi and Fe{sub 3}Si binary compounds from [Fe/Si]{sub 2} and [Fe{sub 3}/Si]{sub 2} multilayers, as shown by transmission electron microscopy investigations. This fabrication procedure is useful to obtain nanostructured binary alloys from precursors which compete for adsorption sites during growth and, therefore, cannot be used simultaneously.
- OSTI ID:
- 22596814
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 23; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Fabrication and electrical transport properties of binary Co-Si nanostructures prepared by focused electron beam-induced deposition
Low-temperature ion-induced epitaxial growth of [alpha]-FeSi[sub 2] and cubic FeSi[sub 2] in Si
Related Subjects
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ADSORPTION
ANNEALING
BINARY ALLOY SYSTEMS
CARBON MONOXIDE
DEPOSITION
ELECTRON BEAMS
ELECTRONS
FABRICATION
GASES
IRON
IRON SILICIDES
IRRADIATION
LAYERS
MIXING
NANOSTRUCTURES
TRANSMISSION ELECTRON MICROSCOPY