Influence of Si/Fe ratio in multilayer structures on crystalline growth of {beta}-FeSi{sub 2} thin film on Si substrate

Journal Article · Mon Jul 14 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2957990· OSTI ID:21123966

Zhengxin, Liu ^[1]; Tanaka, Miyoko ^[2]; Kuroda, Ryo; Makita, Yunosuke ^[1]; Osamura, Masato ^[3]

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1. National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2, Umezono 1-1-1, Tsukuba 305-8568 (Japan)
2. High Voltage Electron Microscopy Station, National Institute for Materials Science, Sakura 3-13, Tsukuba 305-0003 (Japan)
3. Technology Development Department, System Engineers', Company, Limited, AIST Tsukuba West, Onogawa 16-1, Tsukuba 305-8569 (Japan)

The deposited Si/Fe ratio has been found to have a significant influence on crystalline growth of {beta}-FeSi{sub 2} film on Si substrate. Stoichiometry is always satisfied by interdiffusion of Si, under both Si-lean and Si-rich conditions. However, Si diffusion from the substrate into the deposited layer, which compensates for deficient Si, induces an undulated interface, as well as Fe and Si vacancies. On the other hand, excess Si is driven to the {beta}-FeSi{sub 2}/Si interface, which results in a lamellar structure with a large number of small grains. Fe and Si vacancies are significantly reduced by excess Si. These results suggest that precise control of the Si/Fe ratio is essential for good crystallinity and fewer vacancies.

• OSTI ID: 21123966
• Journal Information: Applied Physics Letters, Vol. 93, Issue 2; Other Information: DOI: 10.1063/1.2957990; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
CRYSTALS
DEPOSITION
INTERFACES
IRON SILICIDES
LAYERS
MICROSTRUCTURE
SEMICONDUCTOR MATERIALS
SPUTTERING
STOICHIOMETRY
SUBSTRATES
THIN FILMS
VACANCIES