Magnetron-sputter epitaxy of {beta}-FeSi{sub 2}(220)/Si(111) and {beta}-FeSi{sub 2}(431)/Si(001) thin films at elevated temperatures
- Institute of Materials Research and Engineering (IMRE), A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)
{beta}-FeSi{sub 2} thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 Degree-Sign C. On Si(111), the growth is consistent with the commonly observed orientation of [001]{beta}-FeSi{sub 2}(220)//[1-10]Si(111) having three variants, in-plane rotated 120 Degree-Sign with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]{beta}-FeSi{sub 2}(431)//[110]Si(001) with four variants, which is hitherto unknown for growing {beta}-FeSi{sub 2}. Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between {beta}-FeSi{sub 2} grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of {beta}-FeSi{sub 2}/Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of {beta}-FeSi{sub 2}(431)/Si(001) is larger than that on the surface of {beta}-FeSi{sub 2}(220)/Si(111).
- OSTI ID:
- 22098907
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 4 Vol. 30; ISSN 0734-2101; ISSN JVTAD6
- Country of Publication:
- United States
- Language:
- English
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