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Growth in ultrahigh vacuum and structural characterization of FeSi sub 2 on Si(111)

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
OSTI ID:7116104
; ;  [1]; ; ;  [2];  [3]
  1. Ist. Elettronica Stato Solido, Roma (Italy)
  2. CNRS, Marseille (France)
  3. Univ. di Catania (Italy)
+ Show Author Affiliations

FeSi{sub 2} films grown in ultrahigh vacuum on Si (111) substrates by solid phase epitaxy (SPE) have been characterized by several in situ and ex situ structural techniques: reflection high-energy electron diffraction (RHEED), x-ray diffraction (XRD), and Rutherford backscattering (RBS). The results on a film a few hundred angstroms thick confirm that the FeSi{sub 2} which forms in these conditions is the semiconducting {Beta} phase and that an epitaxial growth takes place with the (202) and/or (220) FeSi{sub 2} planes parallel to the Si(111) planes. The lattice mismatch measurements in films as thin as 100 {angstrom} indicate that the films are little or no elastically strained, at least at a FeSi{sub 2} growth temperature of 600C.

OSTI ID:
7116104
Report Number(s):
CONF-910115--
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:4; ISSN 0734-211X; ISSN JVTBD
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
BACKSCATTERING
BOND LENGTHS
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIFFRACTION
DIMENSIONS
ELECTRON DIFFRACTION
ELEMENTS
EPITAXY
IRON COMPOUNDS
IRON SILICIDES
LENGTH
MOLECULAR BEAM EPITAXY
SCATTERING
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SUBSTRATES
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
TRANSITION ELEMENT COMPOUNDS
ULTRAHIGH VACUUM
X-RAY DIFFRACTION