Direct epitaxial growth of semiconducting {beta}-FeSi{sub 2} thin films on Si(111) by facing targets direct-current sputtering

Journal Article · Mon May 01 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2200153· OSTI ID:20779228

Yoshitake, T; Inokuchi, Y; Yuri, A; Nagayama, K ^[1]

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1. Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga, Fukuoka 816-8580 (Japan)

Semiconducting {beta}-FeSi{sub 2} thin films were epitaxially as-grown on Si(111) substrates at a substrate temperature of 600 deg. C, which is at least 200 deg. C lower than ordinary annealing temperatures, by using the facing targets direct-current sputtering (FTDCS) method using an FeSi{sub 2} target without annealing. The deposited film exhibits a smooth surface with a surface roughness root mean square of 1.47 nm. The direct and indirect optical band gaps estimated from the experiment were in agreement with those of the single crystalline bulk. Temperature dependence of the electrical conductivity implied Co incorporation from the FeSi{sub 2} targets with a purity of 3N. The FTDCS method, in which a substrate is free of plasma and energetic neutral atoms diffused into the substrate owing to low Ar pressure sputtering, is effective for the direct epitaxial growth of {beta}-FeSi{sub 2} thin films with smooth surfaces.

• OSTI ID: 20779228
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 88; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
DEPOSITION
DIRECT CURRENT
ELECTRIC CONDUCTIVITY
EPITAXY
IRON SILICIDES
LAYERS
MONOCRYSTALS
ROUGHNESS
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
THIN FILMS