Fabrication and electrical transport properties of binary Co-Si nanostructures prepared by focused electron beam-induced deposition

Journal Article · Thu Feb 07 00:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4790320· OSTI ID:22102256

Porrati, F.; Huth, M. ^[1]; Kaempken, B.; Terfort, A. ^[2]

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1. Physikalisches Institut, Goethe-Universitaet, Max-von-Laue-Str. 1, D-60438 Frankfurt am Main (Germany)
2. Institut fr Anorganische und Analytische Chemie, Goethe-Universitaet, Max-von-Laue-Str. 7, D-60438 Frankfurt am Main (Germany)

CoSi-C binary alloys have been fabricated by focused electron beam-induced deposition by the simultaneous use of dicobaltoctacarbonyl, Co{sub 2}(CO){sub 8}, and neopentasilane, Si{sub 5}H{sub 12}, as precursor gases. By varying the relative flux of the precursors, alloys with variable chemical composition are obtained, as shown by energy dispersive x-ray analysis. Room temperature electrical resistivity measurements strongly indicate the formation of cobalt silicide and cobalt disilicide nanoclusters embedded in a carbonaceous matrix. Temperature-dependent electrical conductivity measurements show that the transport properties are governed by electron tunneling between neighboring CoSi or CoSi{sub 2} nanoclusters. In particular, by varying the metal content of the alloy, the electrical conductivity can be finely tuned from the insulating regime into the quasi-metallic tunneling coupling regime.

• OSTI ID: 22102256
• Journal Information: Journal of Applied Physics, Vol. 113, Issue 5; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
BINARY ALLOY SYSTEMS
CARBON MONOXIDE
CHEMICAL ANALYSIS
COBALT
COBALT ALLOYS
COBALT SILICIDES
COBALT SULFIDES
COUPLING
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRON BEAMS
NANOSTRUCTURES
SILICON ALLOYS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TUNNEL EFFECT
X RADIATION