Low-temperature ion-induced epitaxial growth of [alpha]-FeSi[sub 2] and cubic FeSi[sub 2] in Si

Journal Article · Mon Jul 05 00:00:00 EDT 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.108825· OSTI ID:6489994

Lin, X W ^[1]; Behar, M; Desimoni, J; Bernas, H ^[2]; Washburn, J; Liliental-Weber, Z ^[1]

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1. Materials Science Division, Lawrence Berkeley Laboratory, University of California at Berkeley, Berkeley, California 94720 (United States)
2. Centre de Spectrometrie Nucleaire et Spectrometrie de Masse, Bat. 108, 91405 Orsay Campus (France)

Ion-beam-induced epitaxial crystallization of amorphous Si implanted with Fe to 18 at. % peak concentration was studied. The structure of the specimen was characterized using transmission electron microscopy and Rutherford backscattering spectrometry. Both cubic FeSi[sub 2] and [alpha]-FeSi[sub 2] were formed in epitaxy with the Si matrix with two types of orientations (fully aligned and twinned). The twins of [alpha]-FeSi[sub 2] and those of cubic FeSi[sub 2] were found to have exactly the same type of epitaxial relationship as for the aligned ones. The thermodynamically stable [beta]-FeSi[sub 2] is not formed, demonstrating that ion-beam-induced crystallization can lead to preferential phase formation as well as to epitaxy.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6489994
• Journal Information: Applied Physics Letters; (United States), Vol. 63:1; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
IRON SILICIDES
EPITAXY
CRYSTAL STRUCTURE
CRYSTALLIZATION
ION BEAMS
ION IMPLANTATION
PHASE STUDIES
PHYSICAL RADIATION EFFECTS
PRECIPITATION
TRANSMISSION ELECTRON MICROSCOPY
BEAMS
ELECTRON MICROSCOPY
IRON COMPOUNDS
MICROSCOPY
PHASE TRANSFORMATIONS
RADIATION EFFECTS
SEPARATION PROCESSES
SILICIDES
SILICON COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
360202* - Ceramics
Cermets
& Refractories- Structure & Phase Studies
360201 - Ceramics
Cermets
& Refractories- Preparation & Fabrication