Highly strained AlAs-type interfaces in InAs/AlSb heterostructures

Journal Article · Mon May 23 04:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4952951· OSTI ID:22590695

Warot-Fonrose, B.; Gatel, C.; Nicolai, J.; Ponchet, A. ^[1]; Claveau, Y.; Combe, N. ^[1]; Magen, C. ^[2]; Teissier, R.; Baranov, A. N. ^[3]

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1. CEMES CNRS-UPR 8011, Université de Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse (France)
2. Transpyrenean Associated Laboratory for Electron Microscopy (TALEM), CEMES-INA, CNRS-Universidad de Zaragoza, Toulouse (France)
3. Institute of Electronics and Systems, UMR 5214 CNRS – University of Montpellier, 34095 Montpellier (France)

Spontaneously formed Al-As type interfaces of the InAs/AlSb system grown by molecular beam epitaxy for quantum cascade lasers were investigated by atomic resolution scanning transmission electron microscopy. Experimental strain profiles were compared to those coming from a model structure. High negative out-of-plane strains with the same order of magnitude as perfect Al-As interfaces were observed. The effects of the geometrical phase analysis used for strain determination were evidenced and discussed in the case of abrupt and huge variations of both atomic composition and bond length as observed in these interfaces. Intensity profiles performed on the same images confirmed that changes of chemical composition are the source of high strain fields at interfaces. The results show that spontaneously assembled interfaces are not perfect but extend over 2 or 3 monolayers.

• OSTI ID: 22590695
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 108; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
BOND LENGTHS
CHEMICAL COMPOSITION
IMAGES
INDIUM ARSENIDES
INTERFACES
LASERS
MOLECULAR BEAM EPITAXY
PHASE STUDIES
RESOLUTION
STRAINS
TRANSMISSION ELECTRON MICROSCOPY